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MBR60L45CTG, MBR60L45WTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR) TC
= 145
°C for MBR60L45CTG
(Rated VR) TC
= 165
°C for MBR60L45WTG
IF(AV)
30
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Storage Temperature
Tstg
?65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR60L45CTG)
?
Junction
?to?Case
(MBR60L45WTG)
?
Junction
?to?Case
RJC
RJC
1.9
0.59
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 30 A, T
C
= 25
°C)
(IF
= 30 A, T
C
= 125
°C)
(IF
= 60 A, T
C
= 25
°C)
(IF
= 60 A, T
C
= 125
°C)
vF
0.55
0.53
0.73
0.76
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
1.2
275
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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